?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com ksp2222a rev. b ksp2222a npn genera l purpose amplifier tm july 2006 ksp2222a npn general purpose amplifier features ? collector-emitter voltage: v ceo = 40v ? collector power dissipation: p c (max)=625mw ? available as pn2222a absolute maximum ratings * t a = 25 c unless otherwise noted * 1. these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. these are steady state limits. the factory should be cons ulted on applications involving pulsed or low duty cycle operatio ns. thermal characteristics t a =25 c unless otherwise noted electrical characteristics * t a = 25c unless otherwise noted * dc item are tested by pulse test : pulse width 300us, duty cycle 2% symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6.0 v i c collector current 600 ma t j junction temperature +150 c t stg storage temperature -55 ~ +150 c symbol parameter max units p c collector power dissipation, by r ja 625 mw r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 c/w symbol parameter test condition min. typ. max. units v (br)cbo collector-base breakdown voltage i c = 10 a, i e = 0 75 v v (br)ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 40 v v (br)ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i cbo collector cutoff current v cb = 60v, i e = 0 0.01 a i ebo emitter cutoff current v eb = 3.0v, i c = 0 10 na h fe dc current gain v ce = 10v, i c = 0.1ma, v ce = 10v, i c = 1ma, v ce = 10v, i c = 10ma, v ce = 10v, i c = 150ma, v ce = 10v, i c = 500ma, 35 50 75 100 40 300 v ce (sat) collector-emitter saturation voltage i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma 0.3 1 v v v be (sat) base-emitter saturation voltage i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma 0.6 1.2 2.0 v v f t current gain bandwidth product i c = 20ma, v ce = 20v, f = 100mhz 300 mhz c obo output capacitance v cb = 10v, i e = 0, f = 1.0mhz 8 pf t on turn on time v cc = 30v, i c = 150ma, i b1 = 15ma, v be(off) = 0.5v 35 ns t off turn off time v cc = 30v, i c = 150ma, i b1 = i b1 = 15ma 285 ns nf noise figure i c = 100 a, v ce = 10v, r s = 1k ? , f = 1.0khz 4 db 1. emitter 2. base 3. collector to-92 1 2 3
2 www.fairchildsemi.com ksp2222a rev. b ksp2222a npn genera l purpose amplifier package dimensions 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92 dimensions in millimeters
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